Rejeki Simanjorang: Requirement for Advanced-Packaging Technology of Power Semiconductor Module in High Power Density Converter for More Electric Transportation

Title :Requirement for Advanced-Packaging Technology of Power Semiconductor Module in High Power Density Converter for More Electric Transportation. rejeki-simanjorang
Invited Presentation: Dr. Rejeki Simanjorang
Affiliation: Electrical Capability Group (ECG) – Singapore
Advanced Technology Center, Rolls-Royce Singapore Pte. Ltd.

 

A recent trend in more electric technology for transportation system, such as in automotive, traction, and even in aircraft has made power electronics technology become indispensable. In aircraft industry, more electric technology will replace mechanical, hydraulic, and pneumatic system with electrical system that is more efficient, reliable, and environmentally friendly. This is commonly known as More Electric Aircraft (MEA) technology. As a result, there is increasing electric power demand in the aircraft. To satisfy such demand, power electronics converter that converts and control electrical power is the key enabling technology. For this weight concerned application, the main performance index of the power converters is their power density which determines how heavy and compact the converters are.

To realize a high power density converter, the most straight-forward way will be by increasing the switching frequency of the converter. By doing so, the size of passive components (capacitor and inductor) will reduce. Along with that, thermal management of the converter should be taken care of to ensure the device operates within permissible temperature range. High switching frequency of converter means driving the power semiconductor module (consists of power semiconductor devices in a package) at high frequency.  This can only be achieved by high speed switching techniques to minimize the switching losses in the power module. To enable high speed switching there are two important factors, i.e. the power devices and the packaging around it.

In recent years, wide band gap power devices such as Silicon Carbide and Gallium Nitride have entered the commercial market. These power devices have the capability for high speed switching. Unfortunately, the currently applied packaging technology does not allow full utilization of these wide band gap devices’ capability.

This presentation will elaborate the electrical performances of power module required for high speed switching in high power density converter. Parasitic impedance in power module that originates from devices and packaging layout will be discussed. Their effects to the power converters such as overshoot voltage, EMI issues, and switching loss will be elaborated. Finally, advanced packaging technique to minimize these parasitic impedances will be presented.

Biography

Rejeki Simanjorang was born in Tanah Karo, Indonesia. He received his B.Sc., M.Eng. and Dr.Eng. degrees in Electrical Engineering from University of Sumatera Utara (Indonesia, 1998), Bandung Institute of Technology (Indonesia, 2002) and Osaka University (Japan, 2008) respectively. He was a researcher in National Institute of Advanced Industrial Science and Technology (AIST) and R&D partnership for Future Power Electronic Technology (FUPET), Japan from 2008 to 2013. Currently, he is a technologist in Rolls-Royce Singapore and leading some collaboration research projects between Rolls-Royce Singapore and external partners. His main research focuses are application of power electronic converter in electrical system, design of high power density converter, and Electrical Health Monitoring (EHM) system for power electronics.